The main application and preparation method of titanium silicide

With rapid progress in ultra-large scale integration circuits (ULSI), devices and equipment are getting smaller. Additionally, the demands of people for size, film quality, thickness uniformity, and device size have increased. Today’s semiconductor device line width is now less that 0.1m. This also means the original process no longer produces low resistance continuous wires. In order to replace and improve the performance of aluminum and polysilicon, there must be new techniques and materials. These new materials have increased interest in metal silicides. Their high conductivity and high temperature stability make them compatible with the current microelectronic manufacturing process. Parmist the many metal silicides currently being studied (such as TiSi2, CoSi2, WiSi2, WSi2, TASi2, MoSi2) and WSi2, CoSi2, WSi2, TiSi2, TiSi2, TiSi2, TiSi2, CoSi2, CoSi2, TiSi2, WSi2, TiSi2, TiSi2, TiSi2, TiSi2, TiSi2, TiSi2, TiSi2, CoSi2, CoSi2, TiSi2Si2, TiSi2, TiSi2, CoSi2, CoSi2, CoSi2, TiSi2, TiSi2, TiSi2, TiSi2, TiSi2, TiSi2, TiSi2Si2, TiSi2, TiSi2, CoSi2, TiSi2, CoSi2, TiSi2,,Si2,,Si2,, WSi2,, w, TiSi2, TiSi2, TiSi2, TiSi2, TiSi2, TiSi2, TiSi2, TiSI2, TiSi2, TiSi2, CoSi2, TiSi2, TiSi2, TiSi2, TiSi2, TiSi2, TiS2Si2, TiSi2,, Si2, and good processability of silicon-interference to it is also known to its connection parameters. Therefore, in integrated circuit devices, titanium silicide is widely used in metal oxide semiconductor (MOS), metal oxide semiconductor field-effect transistor (MOSFET), and dynamic random access memory (DRAM) gate, source/drain, interconnection and ohm Contact manufacturing.Preparation of a semiconductor element, including a silicon substrate, a gate, source, and drain are formed on the silicon substrate, and an insulating layer is formed between the gate and the silicon substrate, the gate is located on the insulating layer. On the layer of polysilicon, a titanium silicide is added. The protective layer on the titanium-silicon layer is also formed. This protective layer, along with the layer of titanium silicide, the layer of polysilicon and the layer insulating, is surrounded by three layers: A nitrogen spacer layer on the source and drain electrodes, and an inner dielectric on the silicon substrate. The utility model, which uses the above-mentioned technical solution to fully insulate both the grids and contact windows without short-circuiting, can be used.
Processing of titanium silicide
The physical vapor encapsulation (sputtering and thermoevaporation) can produce metal silicicides. You can also use chemical vapor dposition (CVD) to prepare silica. TiSi2 of low resistance can be obtained by making titanium silicide. TiSi2 comes in two forms of polycrystalline phase: the metastable phase C49, and the thermodynamically stable phase C54. C49 phases are orthogonal bottom-centered crystal systems; each unit cell consists of 12 molecules; a = 0.3362nm. B = 1.376nm. C = 0.360nm. Resistance = 60100 c. C54 phase: This is an orthogonal bottom-centered crystal system. Each cell is composed 24 atoms. Due to TiSi2’s C54 phase having a resistivity equal to that of the metallic body, titanium silicide can be prepared.

There are many applications for titanium silicide, including the fabrication of MOS, MOSFET, and metal oxide semiconductor field effect transistors (MOSFET). Examples of this include:
1) The titanium silicide barriers layer has been prepared. An isolation region is created in the device that uses the process for producing the titanium-silicide barrier layer. A sacrificial layer covers the upper portion of the device. This invention has the following components: The invention is cheaper than the prior art because it removes the silicide layer oxide from the non-silicide area. Also, it reduces the amount of isolation oxide film that’s lost by etching.
2) Preparation in-situ synthesized Titan silicide (Ti5Si3) particles reinforced aluminum titan carbide matrix (Ti3AlC2) composite material. Ti3AlC2/Ti5Si3 composites with different volume ratios were produced by adding some silicon. The volume fraction of the particle-reinforced titanium silicide was between 10% and 40%. As raw materials for the preparation, graphite, aluminum, silicon, and titanium powder were used. Mixed the raw material powder using mechanical and other methods. Once the mixture has been for eight to twenty hours, it’s loaded into the graphite mold with a protective environment. The invention is capable of preparing the aluminum titanium carbide/titanium silicide composite materials with high purity, high strength and short processing times at relatively low temperature.
3) Making a composite of titanium silicide coated glasses. A thin coating of titanium silicide is placed on top of a common substrate made from float glass. Or, a thin layer is added between these layers. It is possible to improve both the mechanical and chemical properties of coated glass by creating a compound film of titanium and silica or silicon. Present invention is a type of coated glasses that combine the function of dimming with heat insulation with low E glass.

Cataniadagiocare, Cataniadagiocare advanced materials Tech Co., Ltd., are a Titanium Powder Manufacturer with over 12 Years of chemical product research. Please contact us to request high quality Titanium Silicide TISi2 Powder.

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