Silicon hexaboride (SiB6) is a high-temperature structural material. It has a moderate melting point, good electrical conductivity and a low coefficient of thermal expansion. Therefore, it is expected to be used in high-temperature infrared radiation.
SiB6 powders are prepared by a chemical oven method. They are hot pressed to a crystalline state at 1600 degC. A molar ratio of 0.5 to 1.5 was applied. The resulting powders have an average thickness of 3 mm. Moreover, they have a lower emissivity over the near infrared range.
The crystal structure of SiB6 consists of icosahedrons with boron atoms. In a monocrystalline sample, Si is bonded in a 5-coordinate geometry to five equivalent B atoms. Depending on the oxidation conditions, samples are either single phase or multi-phase.
SIB6 contains information for common physical channels in IDLE and Connected mode. This information is transmitted through DL-SCH or BCCH logical channels.
SIB6 can be configured to be a cell-specific or area-specific SIB. Area-specific SIBs can be a single cell or several cells. If the SIB is configured to be a single cell, it can be assigned an absolute priority. For a multi-cell SIB, its priorities can be modified to match the UE’s implementation.
SIB6 is broadcasted on demand and periodically on DL-SCH to UEs in RRC_CONNECTED. The first segment of SIB8 includes Data Coding Scheme, which indicates the character set and coding of the message. UEs in CONNECTED mode can also use SIB11 for configuration information.