Hexagonalboron nutride (or white graphite) is a type of layered hexagonal graphite. It exhibits good lubricity as well as electrical insulating and thermal conductivity. Chemical stability makes it inert to all forms of molten metallic chemistry.
While the speed of computing is increasing with the continued development of semiconductor chip chips, chip heating has become a significant problem. It can limit the progress of chip technology development. It is essential to manage thermal energy in order to develop high-performance electronics chips. Wei Dayun, a Fudan University researcher, has made tremendous progress over the past three years in the field of FET interface modification of FET sub-substrates. It is anticipated that this work will provide a novel technology for dielectric substrat modification in order to resolve the problem of chips heat dissipation.
Wei Dacheng and his team devised a conformal hexagonalboron Nitride (hBN) modification technique (ie, quasibalanced PECVD) to fix the chip heating problem. Wei Dacheng claims that various interfaces limit the heat dissipation from the chip. Particularly important is the interface between semiconductors and dielectric substrates near the conductive canal.
Hexagonalboron Nitride is an excellent dielectric substrate modifiable material. It improves the interface between semiconductors and dielectric substrates. Numerous studies demonstrate that hexagonalboronnitride modification is capable of decreasing the carrier’s surface roughness and impact on impurities. This can also improve device carrier mobility. But, it is frequently overlooked that hexagonal Boron Nitride can be applied in the field interface heat Dissipation.
“The device’s heating problem determines carrier mobility. The lower the mobility the more heat can be generated by the same voltage. It is how you release the heat that determines heat dissipation. Wei Dacheng explained: “Ordinary boron Boron will always have gaps. Transferring the current hexagonal-boron-nitride preparation process will result in more gaps. “Conformal hexagonalboron nitride bonds to the surface completely, so there are no middle gaps. Furthermore, no impurities or other contaminants are added, making it more favorable for good results.”
Wei Dacheng, Conformal Hexagonal Boron Nitride Modification. The device’s mobility is greatly improved, as well as the interface thermal resistance. Additionally, the maximum power density for device operation increases by up to 2 to 4 times. This is greater than that of an existing CPU.
This technology has high universality and not only offers new solutions to the problem. It can be applied on transistor devices built from tungstenselende materials. The process can then be expanded to more materials and other applications. Furthermore, PECVD is an industrial process that’s used frequently in the chip manufacturing sector. Therefore, this conformal hexagonal-boronnitride has tremendous potential for mass production and use.
Future plans include developing field-effect electronic materials such as conjugated organic molecule, macromolecules and low-dimensional Nanomaterials. Research on the design principles of field transistor devices and other fields in optoelectronics. Chemical sensing, biosensing applications, and optoelectronics will also continue.
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